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IXGN72N60C3H1
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
SOT-227B miniBLOC
g fs
C ies
C oes
C res
Q g
Q ge
Q gc
t d(on)
I C = 50A, V CE = 10V, Note 1
V CE = 25V, V GE = 0V, f = 1MHz
I C = 50A, V GE = 15V, V CE = 0.5 ? V CES
33
55
4780
330
117
174
33
72
27
S
pF
pF
pF
nC
nC
nC
ns
t ri
Inductive load, T J = 25 ° C
37
ns
M4 screws (4x) supplied
E on
t d(off)
t fi
E off
t d(on)
t ri
E on
t d(off)
t fi
I C = 50A, V GE = 15V
V CE = 480V, R G = 2 Ω, Note 2
Inductive load, T J = 125 ° C
I C = 50A, V GE = 15V
V CE = 480V, R G = 2 Ω, Note 2
1.03
77
55
0.48
26
36
1.48
120
124
130
110
0.95
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
E off
R thJC
R thCS
Reverse Diode (FRED)
0.93
0.05
mJ
0.35 ° C/W
° C/W
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
V F
I RM
t rr
I F = 60A, V GE = 0V, Note 1
I F = 60A, V GE = 0V,
-di F /dt = 200A/ μ s, V R = 300V
T J = 150°C
T J = 100°C
1.6
1.4
8.3
140
2.0
1.8
V
V
A
ns
R thJC
Notes:
0.42 °C/W
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V CE (Clamp), T J or R G .
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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